Samsung M378B5173QH0-YK0 memory module 4 GB 1 x 4 GB DDR3L 240-pin DIMM – photo 1
Out of Stock / Please Enquire ETA
SAMSUNG

Samsung M378B5173QH0-YK0 memory module 4 GB 1 x 4 GB DDR3L 240-pin DIMM

R348
incl. VAT: R400
  • Stock: Out of Stock / Please Enquire ETA
  • Brand: SAMSUNG
  • Model: M378B5173QH0-YK0
  • Weight: 1 kg
  • Product code: 12854
Please Inquire
R348 incl. VAT: R400
We will email you when the product is back in stock.
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Key features

  • PC/Server 4 GB DDR3L
  • 240-pin DIMM 1 x 4 GB
  • CAS latency: 11
  • 1.35 V

Description

Desktop computers, commonly used as home/office computers, employ DRAM as their main memory. DRAM is a type of RAM (random access memory) and is the most widely used semiconductor memory for current generation computers, offering several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on desktop computers. DRAM has demonstrated rapid and significant technological developments, resulting in considerable increases in performance for desktop computers.

Memory for current generation desktop computers is available as DIMM (dual inline memory modules). Unbuffered DIMMs (or UDIMMs) are the most common type of memory used on desktop systems. A UDIMM memory module does not contain any buffer or additional hardware register between the memory module and the system’s memory controller. UDIMMs also consume much lower power, and have much lower data access latencies than buffered or registered memory. Thus, UDIMMs are an excellent solution for low-cost computing, such as home/personal computing.

Specifications

Features
Internal memory 4 GB
Memory layout (modules x size) 1 x 4 GB
Internal memory type DDR3L
Component for PC/Server
Memory form factor 240-pin DIMM
ECC No
CAS latency 11
Memory clock speed 1600 MHz
Buffered memory type Unregistered (unbuffered)
Memory ranking 1
Memory voltage 1.35 V
Module configuration 512M x 64
Operational conditions
Operating temperature (T-T) 0 - 85 °C
Weight & dimensions
Height 30 mm
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